| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel photoelectric conversion element which includes a compound semiconductor layer and by which high photoelectric conversion efficiency is obtained. <P>SOLUTION: There is provided a photoelectric conversion element comprising at least a metal oxide semiconductor layer, a buffer layer stacked on the metal oxide semiconductor layer so as to contact the metal oxide semiconductor layer, and a light absorbing layer stacked on the buffer layer on a side opposite to the metal oxide semiconductor layer so as to contact the buffer layer. The light absorbing layer is formed of a compound containing Cu and Te. <P>COPYRIGHT: (C)2012,JPO&INPIT |
