发明名称 |
METHOD OF DIFFUSING IMPURITIES INTO CRYSTAL SILICON PARTICLES, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOVOLTAIC GENERATOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of diffusion capable of uniformly forming a second conductive semiconductor layer for a great amount of crystal silicon particles and further to provide a photoelectric conversion device at low cost having high performance and high reliability. <P>SOLUTION: A method of diffusing impurities into crystal silicon particles has process of forming silica glass containing impurities for a second conductive semiconductor on the surface of crystal silicon particles by introducing an impurity gas containing oxygen while inputting a great amount of first conductive crystal silicon particles into a diffusion pipe to make stir and process of forming a second conductive silicon layer by making impurities diffuse on the surface of the crystal silicon. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008047934(A) |
申请公布日期 |
2008.02.28 |
申请号 |
JP20070243321 |
申请日期 |
2007.09.20 |
申请人 |
KYOCERA CORP |
发明人 |
TOMITA KENJI;NISHIMURA KOTA;ARIMUNE HISAO |
分类号 |
H01L21/225;H01L21/02;H01L21/22;H01L31/04 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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