发明名称 CMOS IMAGE SENSORS
摘要 A CMOS image sensor is provided to increase a fill factor and to minimize an area of the CMOS image sensor by allowing four photo diodes to share one floating diffusion region. Plural micro lenses focus light. Plural color filters filter the light from the micro lens to transmit the filtered corresponding light. A photodiode(210) generates photocharges by using the light from the color filters. A transfer transistor(220) transfers the photocharges to a floating diffusion region(230). Four photodiodes formed on adjacent two rows and two columns share one floating diffusion region only. The floating diffusion region is arranged in a square or in a circle. A drain of a reset transistor(260) is located on the center of the floating diffusion region. The floating diffusion region, the reset transistor, and the transfer transistor are symmetrically arranged. The reset transistor is connected to a power voltage(VDD).
申请公布号 KR20080024807(A) 申请公布日期 2008.03.19
申请号 KR20060089447 申请日期 2006.09.15
申请人 KOREA ELECTRONICS ASSOCIATION 发明人 KIM, SUNG BOK
分类号 H01L27/14 主分类号 H01L27/14
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