发明名称 SEMICONDUCTOR POLYSILICON COMPONENT AND METHOD OF MANUFACTURE THEREOF
摘要 On a transparent substrate 110, by use of, for instance, vapor deposition, an Al film 120 is formed ((A) - (B)). Subsequently, with a DC-bias applied on a surface of the Al film 120, a first zinc oxide thin film 130 is formed by use of a sputtering method (C). On a surface of the first zinc oxide thin film 130, according to an atmospheric MO-CVD method, a second zinc oxide thin film 140 is formed (D). When the second zinc oxide thin film 140 deposited by use of an MO-CVD method is formed on the first zinc oxide thin film 130 having a-axis orientation, the second zinc oxide thin film 140 becomes to have the a-axis orientation. Since the Al thin film 120, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/A1/glass structure becomes high in the transparency as a whole. <IMAGE>
申请公布号 EP1313134(B1) 申请公布日期 2010.01.27
申请号 EP20010930116 申请日期 2001.05.14
申请人 TOHOKU TECHNO ARCH CO., LTD.;SHARP CORPORATION 发明人 HAGA, KOUICHI
分类号 H01L21/205;C03C17/34;C03C17/36;C23C14/02;C23C14/08;C23C16/40;C30B25/02;H01L21/31;H01L21/336;H01L29/786 主分类号 H01L21/205
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