| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for improving the uniformity of carrier concentration distribution in a nitride semiconductor layer obtained, in a method of manufacturing a nitride semiconductor template by hydride vapor phase epitaxy where the material gas of germanium is not introduced directly into a reactor.SOLUTION: A method of manufacturing a nitride semiconductor template has a preparation step for preparing an underlying substrate, a step for obtaining an alloy by fusing metal germanium, and a group 13 metal containing at least metal gallium, a step for obtaining a metal halide gas flow by bringing hydrogen halide gas flow into contact with the alloy, and a step for growing a nitride semiconductor layer on the underlying substrate, by bringing a nitrogen source gas flow and the metal halide gas flow into contact with the upper surface of the underlying substrate.SELECTED DRAWING: Figure 3 |
