发明名称 Reducing MEMS stiction by deposition of nanoclusters
摘要 Certain microelectromechanical systems (MEMS) devices, and methods of creating them, are disclosed. The method may include forming a structural layer over a substrate; forming a mask layer over the structural layer, wherein the mask layer is formed with a material selective to an etching process; forming a plurality of nanoclusters on the mask layer; and etching the structural layer using at least the etching process.
申请公布号 US9434602(B2) 申请公布日期 2016.09.06
申请号 US201414446910 申请日期 2014.07.30
申请人 Freescale Semiconductor, Inc. 发明人 Steimle Robert F.;Montez Ruben B.
分类号 B81B3/00;B81C1/00 主分类号 B81B3/00
代理机构 代理人
主权项 1. A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising: forming a structural layer over a substrate; forming a mask layer over the structural layer, wherein the mask layer is formed with a material selective to an etching process; forming a plurality of nanoclusters on the mask layer; using the nanoclusters as a mask for removing portions of the mask layer; and etching the structural layer using remaining portions of the mask layer as a mask for the etching of the structural layer forming a plurality of surface roughness features on a travel stop of the MEMS device.
地址 Austin TX US