发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR CHIP, SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor chip according to an embodiment includes forming on a semiconductor substrate a plurality of etching masks each including a protection film to demarcate a plurality of first regions of the substrate protected by the plurality of etching masks and a second region as an exposed region of the substrate, and anisotropically removing the second region by a chemical etching process to form a plurality of grooves each including a side wall at least partially located in the same plane as an end face of the etching mask and a bottom portion reaching a back surface of the substrate, thereby singulating the semiconductor substrate into a plurality of chip main bodies corresponding to the plurality of first regions. |
申请公布号 |
US2016358863(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615240625 |
申请日期 |
2016.08.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ASANO Yusaku;HIGUCHI Kazuhito;TOMIOKA Taizo;IGUCHI Tomohiro |
分类号 |
H01L23/00;H01L23/544;H01L21/308;H01L23/31;H01L21/78;H01L21/306 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Minato-ku JP |