发明名称 METHOD OF USING A BARRIER-SEED TOOL FOR FORMING FINE PITCHED METAL INTERCONNECTS
摘要 A barrier seed tool is configured to clean trenches in a first chamber, line the trenches with a diffusion barrier layer, and form a copper seed layer over the diffusion barrier layer in a second chamber. The clean chamber is configured to reduce overhangs in the copper seed layer by producing a plasma comprising positively and negatively charged ions including halogen ions, filtering the plasma to selectively exclude positively charged ions, and bombarding with the filtered plasma. The tool and related method can be used to reduce overhangs and improve subsequent gap fill while avoiding excessive damage to the dielectric matrix.
申请公布号 US2016358814(A1) 申请公布日期 2016.12.08
申请号 US201615212306 申请日期 2016.07.18
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Lee Ya-Lien
分类号 H01L21/768;H01L23/522;H01L23/528;H01L21/02;H01L23/532 主分类号 H01L21/768
代理机构 代理人
主权项 1. An integrated circuit device manufacturing process, comprising: forming a dielectric matrix layer over a substrate; forming trenches in the dielectric matrix layer; cleaning sidewalls and bottom surfaces of the trenches using a first plasma; lining the trenches with a diffusion barrier layer; forming a copper seed layer over the diffusion barrier layer, the copper seed layer having an overhang proximate uppermost openings of the trenches; and reducing the overhang by bombarding the copper seed layer with ions of a second plasma.
地址 Hsin-Chu TW