| 摘要 |
The main purpose of the present invention is to provide a method for using a SiC-coated C/C composite whereby degradation can be suppressed when the SiC-coated C/C composite is used. A method for using a SiC-coated C/C composite which is fabricated by directly forming a SiC coating on a surface of a C/C composite substrate under heating, and is once cooled to room temperature, the method characterized in that a crack-shaped gap in the SiC coating occurring during the cooling is eliminated or the width of the gap is made smaller than the width thereof at the time of the cooling to room temperature, and the SiC-coated C/C composite is used at a temperature equal to or greater than the heating temperature during formation of the SiC coating. |
