Semiconductor memory tester with fault analysis memory

摘要

The tester includes a fault analysis memory (13) storing faulty data representing test results of a tested random access memory (RAM), etc. The fault analysis memory includes numerous memory blocks (MBLK), whose number equals that of RAMs of high operational rate, which can be tested in a high rate mode. Each block contains numerous banks (BNC), whose number corresponds to path numbers in a shift operation. In a low rate test mode for memories with low operational rate, each bank of each block in the fault analysis memory is described as a region in which faulty data of a simultaneously tested memories are stored. Faulty data of each tested memory are stored in corresponding bank.