SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A thyristor type semiconductor device which prevents electrode terminals (13, 14) from being provided on a silicon substrate (20) in contact with it by their large inclination even with a conventional manufacturing apparatus, and in contact with the silicon substrate (20) even when warped or wavy, and the method for manufacturing the semiconductor device. This semiconductor device is provided with supporters (11a, 11b) from a glass material on both faces of the silicon substrate (20). At this time, the supporter (11b) is arranged in the boundary between a second N-type layer (18) and a second P-type layer (19) at the at the part opposite to a peripheral side face (22).