Transparent thin film electrode for light emitting diode and laser diode

摘要

Provided is a transparent thin film electrode for forming an ohmic contact to a p-type semiconductor containing nitrogen (N) and gallium (Ga) in order to realize a high quality light emitting diode (LED) and a laser diode (LD). T he transparent thin film electrode includes a copper (Cu)-based conductive layer including Cu and another metal and a metal capping layer formed on the copper-based conductive layer. Alternatively, the transparent thin film electrode may include a Cu-based conductive layer, an intermediate layer formed on the Cu-based conductive layer, and a metal capping layer formed on the intermediate layer.