| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element of superior electrostatic breakdown voltage whose light-emitting output is improved so that a range of application to various applied products is widened with the use of an active layer of a multiple quantum well structure. SOLUTION: In a multiple quantum well structure, an n-side first multi-layer film layer 5 constituted by laminating at least three layers of at least a lower layer 5a of undoped nitride semiconductor, an intermediate layer 5b of n-type impurity-doped nitride semiconductor and an upper layer 5c of undoped nitride semiconductor in this order on a substrate 1 is contained, an active layer 7 comprises InaGa1-aN (0<=a<=1), and further, a p-side multi-layer film clad layer 8 constituted by laminating third and fourth nitride semiconductor layers, whose band gap energy is different from each other and p-type impurity concentration is different from or equal to each other, or a p-side single film clad layer 8 of AlbGa1-bN (0<=b<=1) containing p-type impurity, is contained. |
