发明名称 SOLDER MATERIAL AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To maintain radiation characteristics of a semiconductor device and to suppress the destruction etc., of a joining layer due to warping and thermal fatigue of a substrate after joining of a ceramic substrate and a metallic heat sink by effectively lowering the thermal expansion coefficient of a solder material without impairing the thermal conductivity and joining characteristics, etc., of the non-lead-based solder. <P>SOLUTION: The solder material contains the non-lead-based solder and particles having the thermal expansion coefficient ranging from 0 to -10x10<SP>-6</SP>/°C at room temperature. In the semiconductor device 1, the metallic heat sink 2 and the ceramic circuit board 3 are joined by such non-lead-base solder. A power semiconductor element 8 and the like are joined to and mounted on the ceramic circuit board 3. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006263774(A) 申请公布日期 2006.10.05
申请号 JP20050085543 申请日期 2005.03.24
申请人 TOSHIBA CORP 发明人 MATSUMOTO KAZUTAKA;TADAUCHI KIMIHIRO;KOMATSU IZURU;TAKAHASHI TOSHIHIDE
分类号 B23K35/26;C22C13/00;C22C13/02;C22C19/07;C22C38/00;H01L23/12;H01L23/14 主分类号 B23K35/26
代理机构 代理人
主权项
地址