发明名称 CRUCIBLE FOR CRYSTAL GROWTH
摘要 PROBLEM TO BE SOLVED: To provide a crucible for crystal growth in which a crystal having a low dislocation density can be grown even when the crucible has a large diameter. SOLUTION: The crucible 1 for crystal growth is made of boron nitride including a cylindrical top end 3 to mount a seed crystal and a cylindrical straight drum 5 formed over the top end to grow a crystal and having a larger diameter than the diameter of the top end. The thickness T1 of the top end and the thickness T2 of the straight drum satisfy the condition of 0.1 mm≤T2<T1≤5 mm, and the inner diameter D2 of the straight drum and the length L2 of the straight drum satisfy the condition of 100 mm<D2 and 2<L2/D2<5. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006265025(A) 申请公布日期 2006.10.05
申请号 JP20050084402 申请日期 2005.03.23
申请人 SUMITOMO ELECTRIC IND LTD 发明人 HANEKI YOSHIAKI
分类号 C30B11/00 主分类号 C30B11/00
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