发明名称 |
METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE |
摘要 |
A gate insulating layer, an active layer and a data metal film are sequentially formed on a substrate. A first photoresist pattern having a relatively small thickness in a channel forming area with respect to a thickness of the photoresist pattern not in the channel forming area is formed on the data metal film. The data metal film and the active layer are sequentially etched using the first photoresist pattern. The active layer is etched using the first photoresist pattern. The first photoresist pattern is dry etched using a gas mixture including a sulfur hexafluoride gas and an oxygen gas to form a second photoresist pattern with an opening formed in the channel forming area. The data metal film is then etched using the second photoresist pattern. Dry, wet or acid cleaning procedures used within the manufacturing method reduce formation of stringers in the substrate. |
申请公布号 |
US2008096332(A1) |
申请公布日期 |
2008.04.24 |
申请号 |
US20070746265 |
申请日期 |
2007.05.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE DUCK-JUNG;KIM KYUNG-SEOP;LEE YONG-EUI;PARK MYUNG-IL;LEE DONG-CHIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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