Porous semiconducting structure useful in an electronic component for field-effect transistor, has an electrical conductivity, an activation energy of the conductivity, a solid content, a pore size and a thickness of a specified range

摘要

The porous semiconducting structure useful in an electronic component for field-effect transistor, has an electrical conductivity of 5x 10 ->8>Scm ->1>to 10 Scm 1>, an activation energy of the electrical conductivity of 0.1-700 meV, a solid content of 30-60 vol.%, a pore size of 1-500 nm, a Brunauer-Emmett-Teller (BET) surface of 10-500 m 2>g ->1>and a thickness of 10 nm to 10 mu m. The solid content has partially crystalline doped components with size of 5-500 nm and spherical and/or ellipsoidal form. The doped components are connected themselves over sintering necks. An independent claim is included for a method for the production of a porous semiconducting structure.