THIN FILM TRANSISTOR AND DISPLAY APPARATUS

摘要

A thin film transistor includes a crystal growth region in which a crystal is two-dimensionally grown on a plane, a source region and a drain region formed in the crystal growth region, and a gate electrode which is formed on a channel region between the source region and the drain region through a gate insulator film. The thin film transistor is characterized in that a side end portion on the channel region of the source region or drain region is aligned with a position located within a range of 1 mum to 3.5 mum away from a crystal growth start position.