发明名称 |
Method of fabricating a recessed channel access transistor device |
摘要 |
A method of fabricating a recessed channel access transistor device is provided. First, a semiconductor substrate having thereon a recess etched into a major surface is provided. A gate dielectric layer is then formed on interior surface of the recess. A recessed gate electrode is then formed in and on the recess. The recessed gate electrode comprises a recessed gate portion that is inlaid into the recess and under the major surface, and an upper gate portion above the major surface. An exposed sidewall of the recessed gate electrode is isotropically etched to thereby form a trimmed neck portion having a width that is smaller than that of the recessed gate portion. An exposed sidewall of the trimmed neck portion is then oxidized.
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申请公布号 |
US8288231(B1) |
申请公布日期 |
2012.10.16 |
申请号 |
US201113212209 |
申请日期 |
2011.08.18 |
申请人 |
LIAO WEI-MING;CHANG MING-CHENG;NANYA TECHNOLOGY CORP. |
发明人 |
LIAO WEI-MING;CHANG MING-CHENG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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