| 摘要 |
This deep ultraviolet laser light source is provided with: a substrate; a wide band gap semiconductor layer which is provided on the substrate; an aluminum metal back layer which is provided on the wide band gap semiconductor layer; and a resonator structure which causes deep ultraviolet light produced from the wide band gap semiconductor layer to resonate. This deep ultraviolet laser light source is configured such that the wide band gap semiconductor layer is excited by electron beam irradiation from the aluminum metal back layer side and laser oscillation of the deep ultraviolet light produced from the wide band gap semiconductor layer is caused by the resonator structure. Consequently, there is achieved a deep ultraviolet laser light source which uses a wide band gap semiconductor layer by means of electron beam excitation. |
