发明名称 |
WAVEGUIDE STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
A waveguide structure includes a signal line and two static lines. The signal line is disposed between the static lines in a first direction. The static lines and the signal line are disposed parallel to one another. Each static line includes a first conductive pattern, a second conductive pattern, and a third conductive pattern. The first conductive pattern and the signal line are disposed on an identical plane of a dielectric layer. A thickness of the first conductive pattern is substantially equal to a thickness of the signal line. The second conductive pattern is disposed on the first conductive pattern. A width of the first conductive pattern is larger than a width of the second conductive pattern in the first direction. The third conductive pattern is disposed on the second conductive pattern. A width of the third conductive pattern is larger than the width of the second conductive pattern. |
申请公布号 |
US2016197391(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201514602290 |
申请日期 |
2015.01.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Li Tzung-Lin;Lee Chien-Yi;Chang Chieh-Pin |
分类号 |
H01P3/16;H01P11/00 |
主分类号 |
H01P3/16 |
代理机构 |
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代理人 |
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主权项 |
1. A waveguide structure, comprising:
a signal line disposed on a dielectric layer; and two static lines, wherein the signal line is disposed between the two static lines in a first direction, the static lines are disposed parallel to the signal line, and each of the static lines comprises:
a first conductive pattern disposed on a same plane of the dielectric layer as the signal line, wherein a thickness of the first conductive pattern is substantially equal to a thickness of the signal line;a second conductive pattern disposed on the first conductive pattern, wherein a width of the first conductive pattern in the first direction is larger than a width of the second conductive pattern in the first direction; anda third conductive pattern disposed on the second conductive pattern, wherein a width of the third conductive pattern in the first direction is larger than the width of the second conductive pattern in the first direction. |
地址 |
Hsin-Chu City TW |