发明名称 WAVEGUIDE STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 A waveguide structure includes a signal line and two static lines. The signal line is disposed between the static lines in a first direction. The static lines and the signal line are disposed parallel to one another. Each static line includes a first conductive pattern, a second conductive pattern, and a third conductive pattern. The first conductive pattern and the signal line are disposed on an identical plane of a dielectric layer. A thickness of the first conductive pattern is substantially equal to a thickness of the signal line. The second conductive pattern is disposed on the first conductive pattern. A width of the first conductive pattern is larger than a width of the second conductive pattern in the first direction. The third conductive pattern is disposed on the second conductive pattern. A width of the third conductive pattern is larger than the width of the second conductive pattern.
申请公布号 US2016197391(A1) 申请公布日期 2016.07.07
申请号 US201514602290 申请日期 2015.01.22
申请人 UNITED MICROELECTRONICS CORP. 发明人 Li Tzung-Lin;Lee Chien-Yi;Chang Chieh-Pin
分类号 H01P3/16;H01P11/00 主分类号 H01P3/16
代理机构 代理人
主权项 1. A waveguide structure, comprising: a signal line disposed on a dielectric layer; and two static lines, wherein the signal line is disposed between the two static lines in a first direction, the static lines are disposed parallel to the signal line, and each of the static lines comprises: a first conductive pattern disposed on a same plane of the dielectric layer as the signal line, wherein a thickness of the first conductive pattern is substantially equal to a thickness of the signal line;a second conductive pattern disposed on the first conductive pattern, wherein a width of the first conductive pattern in the first direction is larger than a width of the second conductive pattern in the first direction; anda third conductive pattern disposed on the second conductive pattern, wherein a width of the third conductive pattern in the first direction is larger than the width of the second conductive pattern in the first direction.
地址 Hsin-Chu City TW