PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREFOR

摘要

In order to form a photoelectric conversion layer of a photoelectric conversion element, mixed liquid including poly-[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl2′,1′,3′-benzothiadiazle)] as a p-type organic semiconductor material and a fullerene derivative as an n-type organic semiconductor material, which configure a bulk heterojunction are applied and dried. The dried substance is exposed in an atmosphere including vapor of a solvent that dissolves the p-type organic semiconductor material preferentially to the n-type organic semiconductor material.

主权项

1. A fabrication method for a photoelectric conversion device, comprising:
forming a photoelectric conversion layer; wherein the forming a photoelectric conversion layer includes:
applying and drying mixed liquid including poly-[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl2′,1′,3′-benzothiadiazle)] as a p-type organic semiconductor material and a fullerene derivative as an n-type organic semiconductor material, which configure a bulk heterojunction; andexposing the dried substance in an atmosphere including vapor of a solvent that dissolves the p-type organic semiconductor material preferentially to the n-type organic semiconductor material.