发明名称 |
THREE-DIMENSIONAL THIN-FILM NITINOL DEVICES |
摘要 |
A method of manufacturing three-dimensional thin-film nitinol (NiTi) devices includes: depositing multiple layers of nitinol and sacrificial material on a substrate. A three-dimensional thin-film nitinol device may include a first layer of nitinol and a second layer of nitinol bonded to the first layer at an area masked and not covered by the sacrificial material during deposition of the second layer. |
申请公布号 |
US2016235564(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615136809 |
申请日期 |
2016.04.22 |
申请人 |
NSVascular, Inc. |
发明人 |
Johnson Alfred David;Kealey Colin |
分类号 |
A61F2/90;C23C14/58;A61F2/844;C23C14/34 |
主分类号 |
A61F2/90 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
deep reactive ion etching a pattern of grooves on a surface of a semiconductor substrate, the grooves corresponding to fenestrations in a desired three-dimensional nitinol structure; depositing a lift-off layer on the grooved semiconductor substrate surface; depositing a first NiTi layer over the lift-off layer; depositing a sacrificial layer to partially cover the first NiTi layer, the sacrificial layer corresponding to a lumen in the desired three-dimensional nitinol structure; and depositing a second NiTi layer over the sacrificial layer. |
地址 |
Los Angeles CA US |