发明名称 THREE-DIMENSIONAL THIN-FILM NITINOL DEVICES
摘要 A method of manufacturing three-dimensional thin-film nitinol (NiTi) devices includes: depositing multiple layers of nitinol and sacrificial material on a substrate. A three-dimensional thin-film nitinol device may include a first layer of nitinol and a second layer of nitinol bonded to the first layer at an area masked and not covered by the sacrificial material during deposition of the second layer.
申请公布号 US2016235564(A1) 申请公布日期 2016.08.18
申请号 US201615136809 申请日期 2016.04.22
申请人 NSVascular, Inc. 发明人 Johnson Alfred David;Kealey Colin
分类号 A61F2/90;C23C14/58;A61F2/844;C23C14/34 主分类号 A61F2/90
代理机构 代理人
主权项 1. A method comprising: deep reactive ion etching a pattern of grooves on a surface of a semiconductor substrate, the grooves corresponding to fenestrations in a desired three-dimensional nitinol structure; depositing a lift-off layer on the grooved semiconductor substrate surface; depositing a first NiTi layer over the lift-off layer; depositing a sacrificial layer to partially cover the first NiTi layer, the sacrificial layer corresponding to a lumen in the desired three-dimensional nitinol structure; and depositing a second NiTi layer over the sacrificial layer.
地址 Los Angeles CA US