| 发明名称 |
GERMANIUM-ON-INSULATOR SUBSTRATE AND METHOD FOR FORMING THE SAME |
| 摘要 |
Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the bulk silicon substrate and has a first region exposing a portion of the bulk silicon substrate, a silicon layer which covers a portion of the top surface of the oxide film and does not cover the first region, a germanium layer which contacts the bulk silicon substrate exposed through the first region and is disposed on the oxide film, and an insulating layer which covers the oxide film and the silicon layer and exposes the top surface of the germanium layer. |
| 申请公布号 |
US2016260805(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201615056660 |
申请日期 |
2016.02.29 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM Sang Hoon;KIM Gyungock;KIM In Gyoo |
| 分类号 |
H01L29/161;H01L21/3105;H01L21/02;H01L29/06;H01L21/311 |
主分类号 |
H01L29/161 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A germanium-on-insulator substrate comprising:
a bulk silicon substrate; an oxide film disposed on the bulk silicon substrate, the oxide film having a first region exposing a portion of the bulk silicon substrate; a silicon layer covering a portion of a top surface of the oxide film and exposing the first region; a germanium layer in contact with the bulk silicon substrate exposed through the first region, the germanium layer disposed on the oxide film; and an insulating layer covering the oxide film and the silicon layer and exposing a top surface of the germanium layer. |
| 地址 |
Daejeon KR |
