| 发明名称 |
VERTICAL FLOATING GATE NAND WITH SELECTIVELY DEPOSITED ALD METAL FILMS |
| 摘要 |
A method of making a monolithic three dimensional NAND string which contains a semiconductor channel and a plurality of control gate electrodes, includes selectively forming a plurality of discrete charge storage regions using atomic layer deposition. The plurality of discrete charge storage regions includes at least one of a metal or an electrically conductive metal oxide. |
| 申请公布号 |
US2016293617(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201615177737 |
申请日期 |
2016.06.09 |
| 申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
SHARANGPANI Rahul;MAKALA Raghuveer S.;KWON Thomas Jongwan;KANAKAMEDALA Senaka;MATAMIS George |
| 分类号 |
H01L27/115;H01L21/285;H01L29/788;H01L21/311;H01L21/3205;H01L29/423;H01L21/28;H01L21/02 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a monolithic three dimensional NAND string comprising a semiconductor channel and a plurality of control gate electrodes, the method comprising selectively forming a plurality of discrete charge storage regions using atomic layer deposition, wherein the plurality of discrete charge storage regions comprises at least one of a metal or an electrically conductive metal oxide. |
| 地址 |
Plano TX US |
