CIRCUIT STRUCTURE FOR SUPPRESSING ELECTROMAGNETIC INTERFERENCE OF DDR SDRAM SIGNALS

摘要

A circuit structure for suppressing electromagnetic interference (EMI) of DDR SDRAM signals, applied to a memory interface unit (MIU) of a DDR SDRAM, includes: a first conducting line, coupled to a reference level; a second conducting line, parallel to the first conducting line, coupled to the reference level; a third conducting line, between and parallel to the first and second conducting lines, transmitting a signal, the first, second and third conducting lines located on a same plane; and a connecting component, having two ends, one of the two ends electrically connected to the first conducting line and the other of the two ends electrically connected to the second conducting line, the connecting component crossing and electrically insulated from the third conducting line.

主权项

1. A circuit structure, applied to a memory interface unit (MIU) of a double data rate synchronous dynamic random access memory (DDR SDRAM), comprising:
a first conducting line, coupled to a reference level; a second conducting line, parallel to the first conducting line, coupled to the reference level; a third conducting line, between the first conducting line and the second conducting line and parallel to the first conducting line and the second conducting line, transmitting a signal, the first conducting line, the second conducting and the third conducting located on a same plane; and a connecting component, having two ends, one of the two ends electrically connected to the first conducting line and the other of the two ends electrically connected to the second conducting line, the connecting component crossing the third conducting line and electrically insulated from the third conducting line.