| 发明名称 |
PLASMA PROCESSING APPARATUS |
| 摘要 |
Disclosed is a plasma processing apparatus that includes a processing container configured to accommodate a wafer, and a dielectric window provided to hermetically seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container. The dielectric window has a thickness of 3λ/8 or less (here, λ is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated, and a protrusion is formed at the predetermined position on a bottom surface of the dielectric window to protrude downward from the bottom surface. |
| 申请公布号 |
US2016358758(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615173241 |
申请日期 |
2016.06.03 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HIRANO Takahiro;IWAO Toshihiko |
| 分类号 |
H01J37/32;H01J37/16 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing apparatus that performs a plasma processing on an object to be processed (“workpiece”), the plasma processing apparatus comprising:
a processing container configured to accommodate the workpiece; and a dielectric window provided to hermetically seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container, wherein the dielectric window has a thickness of 3λ/8 or less (here, λ is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated, and a protrusion is formed at the predetermined position on a bottom surface of the dielectric window to protrude downward from the bottom surface. |
| 地址 |
Tokyo JP |
