发明名称 HETEROSTRUCTURES AND ELECTRONIC DEVICES DERIVED THEREFROM
摘要 The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices and so on. In the present invention, the complexity and functionality of such van der Waals heterostructures is taken to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light-emitting diodes (LEDs) made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences.
申请公布号 WO2016203184(A1) 申请公布日期 2016.12.22
申请号 WO2015GB51784 申请日期 2015.06.18
申请人 THE UNIVERSITY OF MANCHESTER 发明人 WITHERS, Frederick;NOVOSELOV, Konstantin
分类号 H01L29/51;H01L29/16;H05B33/14;H05B33/20;H05B33/26 主分类号 H01L29/51
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