发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To stabilize a power supply voltage that is supplied to a controlled chip, relating to a stacked semiconductor device that uses a through electrode. <P>SOLUTION: The semiconductor device includes an interposer IP to which a substrate power supply terminal 91V is provided, an interface chip IF where a surface bump FB is provided on one surface, with a rear surface bump BB provided on the other surface, and a core chip CC connected to the interface chip IF. The positions in plan view, viewed along stacking direction of the surface bump FB and the rear surface bump BB, connected to the substrate power supply terminal 91V, being provided to the interface chip IF, as well as a through electrode TSV1 connecting them, agree among others, with an array pitch P2 of the rear surface bumps BB for signal being shorter than an array pitch P1 of them. Since a power supply can be supplied to the core chip from the interposer IP straight, a power supply voltage that is supplied to the core chip can be stabilized. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209497(A) 申请公布日期 2012.10.25
申请号 JP20110075402 申请日期 2011.03.30
申请人 ELPIDA MEMORY INC;HITACHI ULSI SYSTEMS CO LTD 发明人 SHIGESANE YASUYUKI;YOKO HIDEYUKI;IDE AKIRA
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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