CVD APPARATUS AND METHOD FOR CLEANING CVD APPARATUS

摘要

A method for cleaning CVD apparatuses enabling to efficiently remove a by-product material adhering to the surface of the inner wall of a CVD chamber or the like with less damage to the electrode is disclosed. When the inside of the CVD chamber is subjected to a plasma cleaning, an RF frequency applied to an upper electrode (20) is set higher than the RF frequency applied thereto for film formation. The method for cleaning CVD apparatuses comprises a first step wherein a plasma cleaning is conducted while applying a first RF frequency to the upper electrode (20) and a second step wherein a plasma cleaning is conducted while applying a second RF frequency that is higher than the first RF frequency to the upper electrode (20). It is preferable that the electrode gap in the second step is larger than that in the first step.