METHOD FOR INJECTING IONS TO SEMICONDUCTOR SUBSTRATE TO PRECISELY CONTROL INJECTION OF IONS PARALLEL WITH SURFACE OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for injecting ions to a semiconductor substrate is provided to precisely control the injection of ions parallel with the surface of a semiconductor substrate by applying an electric field to accelerate the ions in one direction and by applying a magnetic field in parallel with the surface crossing the one direction at a predetermined angle. CONSTITUTION: Ions are injected to the sidewall of a semiconductor layer(11) protruding to a semiconductor substrate(10). An electric field for accelerating the ions in one direction is applied and a magnetic field parallel with the surface crossing the one direction at a predetermined angle is applied, so that the direction of the ions injected to the sidewall of the semiconductor layer is controlled.