Semiconductor memory device e.g. dynamic random access memory, has switch pair connecting bit lines to local data lines, where voltage of data lines maintains bit line voltage at time when column selection signal is activated

摘要

The device has a pair of bit lines (BL, BLB) presenting data stored in a memory cell. A bit line sense amplifier senses and amplifies data loaded on the pair of bit lines. A column selection switch pair (220) connects the pair of bit lines to a pair of local data lines (LI0, LI0B). Voltage of the pair of local data lines maintains a bit line voltage at a time when a column selection signal is activated.