发明名称 SEMICONDUCTOR CHIP WITH SOLDER BUMP SUPPRESSING GROWTH OF INTER-METALLIC COMPOUND AND METHOD OF FRABRICATING THE SAME
摘要 <p>A semiconductor chip having a solder bump and a method of fabricating the same are provided. The semiconductor chip includes at least one metal adhesion layer formed on an electrode pad of the semiconductor chip, an interlayer isolation layer formed on the metal adhesion layer, at least one penetration layer formed on the interlayer isolation layer and penetrating into the solder bump, and the solder bump formed on the penetration layer. Thereby, materials of the penetration layer penetrate into the solder bump to change the solder bump into a multi-component solder bump, so that the growth of the IMC is suppressed, and the reliability of the semiconductor chip can be improved.</p>
申请公布号 WO2007097508(A1) 申请公布日期 2007.08.30
申请号 WO2006KR04522 申请日期 2006.11.01
申请人 NEPES CORPORATION;KANG, IN SOO;CHOI, JOON YOUNG 发明人 KANG, IN SOO;CHOI, JOON YOUNG
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址