发明名称 PATTERN TRANSFER WITH SELF-SIMILAR SACRIFICIAL MASK LAYER AND VECTOR MAGNETIC FIELD SENSOR
摘要 A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy
申请公布号 US2008088984(A1) 申请公布日期 2008.04.17
申请号 US20070952667 申请日期 2007.12.07
申请人 UCHICAGO ARGONNE, LLC 发明人 HOFFMANN AXEL
分类号 G11B5/127;B44C1/22;G11B5/33;G11B5/39 主分类号 G11B5/127
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