PHASE-CHANGE MEMORY DEVICE, AND METHODS OF FABRICATING AND OPERATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a phase-change memory device, and to provide methods of fabricating and operating the same. SOLUTION: The phase change memory device includes: a switching device and a storage node coupled therewith, wherein the storage node includes a lower electrode; a phase change layer formed on the lower electrode; a material layer formed on the upper of the phase change layer; and an upper electrode provided on the phase change layer surrounding the material layer. COPYRIGHT: (C)2008,JPO&INPIT