| 摘要 |
<p>Manufacturing Method of Single Crystal To provide a manufacturing method of a single crystal which can stably pull a single crystal which is totally free from dislocation and has a goad crystal shape. The method comprises steps of actuating a crystal driving unit 14 so as to immerse a seed crystal 30 in a silicon melt 3, and controlling the crystal driving unit 14 and a crucible driving unit 15 under predetermined conditions so as to pull the seed crystal. In this pulling step, a horizontal magnetic field device 16 is driven so as to apply a magnetic field in the horizontal direction to the inside of the silicon melt 3 in a crucible 4. The horizontal magnetic field device 16 fixes a magnetic field axis 1 of the applied magnetic field at a constant position from a liquid surface 3a of the silicon melt 3. More specifically, positional adjustment of the horizontal magnetic field device 16 in the vertical direction is carried out in advance by a horizontal magnetic field position adjusting device 19, and the magnetic field axis 1 of the applied magnetic field is fixed at a position of a constant distance which is lower than the liquid surface 3a of the silicon melt 3 by more than 50 mm and at the same level or higher than a depth L from the liquid surface of the remaining silicon melt at the point of tail-in.</p> |
