发明名称 PHOTOMASK AND METHOD FOR FORMING OVERLAY VERNIER OF SEMICONDUCTOR DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask by which a thin film can be easily formed on an overlay vernier by forming an inclination on side portions of the overlay vernier, and to provide a method for forming an overlay vernier of a semiconductor device using the mask. <P>SOLUTION: The photomask includes a reticle 202 formed of a first material through which exposure light can transmit, a first pattern formed on the reticle and formed of a material through which light cannot transmit, a second pattern having a size smaller than the first pattern, and an auxiliary pattern 204 formed to come in contact with the first pattern and formed of a second material different from the first material of the reticle. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009020499(A) 申请公布日期 2009.01.29
申请号 JP20080145558 申请日期 2008.06.03
申请人 HYNIX SEMICONDUCTOR INC 发明人 LIM YONG HYUN
分类号 G03F1/42;G03F1/68;H01L21/027 主分类号 G03F1/42
代理机构 代理人
主权项
地址