发明名称 SUBSTRATE TREATMENT DEVICE, AND SUBSTRATE TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate treatment device having improved productivity by making characteristic values for the treatment results approximate target values, in all substrates to which etching treatment is applied after resist pattern forming treatment. <P>SOLUTION: The substrate treatment device includes inspecting means 301, 400 for measuring and inspecting the characteristic values for patterns formed on the substrates W after treated with resist pattern forming devices Li1-Li3 and etching pattern forming devices Et1-Et3, and a control means 600 for managing results for the substrates W measured by the inspecting means 301, 400 and managing carrying information for specifying modules Md and chambers Ch where the substrates W are treated. The control means 600 finds a range of correction values settable for the modules Md and the chambers Ch in accordance with the measurement results and the carrying information, and determines a combination of modules Md and chambers Ch so that the characteristic values for the patterns corrected in the range of the correction values approximate predetermined values for all substrates W. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009021443(A) 申请公布日期 2009.01.29
申请号 JP20070183569 申请日期 2007.07.12
申请人 TOKYO ELECTRON LTD 发明人 SHIBATA TAKESHI;NISHIMURA EIICHI
分类号 H01L21/02;H01L21/027;H01L21/3065;H01L21/66 主分类号 H01L21/02
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