发明名称 |
GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT |
摘要 |
Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.
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申请公布号 |
US2009061631(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20070848515 |
申请日期 |
2007.08.31 |
申请人 |
SPANSION LLC |
发明人 |
LEE CHUNGHO;KINOSHITA HIROYUKI;CHANG KUO-TUNG;SUGINO RINJI;CHANG CHI;WU HUAQIANG |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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