| 摘要 |
A photo detector array is provided to extend dynamic range of the photo detector array by preventing electric charges generated by a back ground light source and an input signal from being stored in a capacitor. A photo detector array(10) comprises: a substrate; a gate electrode formed on the substrate; an insulating layer formed on the gate electrode and an insulating layer; a semiconductor layer formed on the insulating layer; a first diffusion region formed on the semiconductor layer; a second diffusion region formed on the semiconductor layer; and a third diffusion region formed on the semiconductor layer. The gate electrode is formed between the first diffusion region and the second diffusion region. The first diffusion region, the gate electrode and the third diffusion region forms a first photosensitive transistor(14-1) detecting optical signals.
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