发明名称 |
METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A FIN CHANNEL TRANSISTOR |
摘要 |
The semiconductor device includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof. The semiconductor device additionally has a fin channel region protruded over the device isolation structure in a longitudinal direction of a gate region; a gate insulating film formed over the semiconductor substrate including the protruded fin channel region; and a gate electrode formed over the gate insulating film to fill up the protruded fin channel region.
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申请公布号 |
US2010022057(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090569802 |
申请日期 |
2009.09.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHUNG SUNG WOONG;LEE SANG DON |
分类号 |
H01L21/762;H01L21/28;H01L21/8242 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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