发明名称 |
NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND ACCESS DEVICE |
摘要 |
When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
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申请公布号 |
US2010023678(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20080523756 |
申请日期 |
2008.01.25 |
申请人 |
NAKANISHI MASAHIRO;KATO ISAO;TOYAMA MASAYUKI;ADACHI TATSUYA;NAKAGAKI HIROFUMI;MAEDA TAKUJI |
发明人 |
NAKANISHI MASAHIRO;KATO ISAO;TOYAMA MASAYUKI;ADACHI TATSUYA;NAKAGAKI HIROFUMI;MAEDA TAKUJI |
分类号 |
G06F12/00;H01L35/00 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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地址 |
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