发明名称 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND ACCESS DEVICE
摘要 When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
申请公布号 US2010023678(A1) 申请公布日期 2010.01.28
申请号 US20080523756 申请日期 2008.01.25
申请人 NAKANISHI MASAHIRO;KATO ISAO;TOYAMA MASAYUKI;ADACHI TATSUYA;NAKAGAKI HIROFUMI;MAEDA TAKUJI 发明人 NAKANISHI MASAHIRO;KATO ISAO;TOYAMA MASAYUKI;ADACHI TATSUYA;NAKAGAKI HIROFUMI;MAEDA TAKUJI
分类号 G06F12/00;H01L35/00 主分类号 G06F12/00
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