发明名称 PLATED METAL HARD MASK FOR VERTICAL NAND HOLE ETCH
摘要 An embodiment of the present invention relates to methods, device, and system for forming pitchers recessed with a high height to width ratio. Frequently, the pitchers are formed in context of manufacturing a vertical NAND (VNAND) memory device. Various embodiments disclosed in the present invention relate to process flows accompanying the steps of: depositing sacrificial posts on a metal seed layer covering a stack of materials laid below and molding the sacrificial posts; electroplating or electroless plating metal hard mask materials around the circumference of the sacrificial posts; removing the sacrificial posts; and etching the stack of materials laid below to form pitcher recessed with a high height to width ratio.
申请公布号 KR20160058031(A) 申请公布日期 2016.05.24
申请号 KR20150157928 申请日期 2015.11.11
申请人 LAM RESEARCH CORPORATION 发明人 LEE WILLIAM T.
分类号 H01L27/115;H01L21/033;H01L21/3213 主分类号 H01L27/115
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