发明名称 |
SOLAR CELL HAVING QUANTUM WELL STRUCTURE AND METHOD FOR MANUFACTURING SAME |
摘要 |
The present invention provides a practical solar cell having a multiple quantum well structure and a method for manufacturing the same, and the heterostructure solar cell is capable of reducing the transmission loss of solar light and the short wavelength loss of solar light by inserting a multi-layer quantum well structure between p- and n-type semiconductors, thereby obtaining a high-efficiency solar cell which can overcome the limitations of theoretical conversion efficiency and reducing manufacturing costs. |
申请公布号 |
US2016204291(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201314410108 |
申请日期 |
2013.06.05 |
申请人 |
CHEONGJU UNIVERSITY INDUSTRY & ACADEMY COOPERATION FOUNDATION |
发明人 |
KIM Kwang-Ho |
分类号 |
H01L31/0352;H01L31/0368;H01L31/0224;H01L31/0236;H01L31/18;H01L31/0376;H01L31/0216 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a solar cell having a multiple quantum well structure, comprising:
forming a quantum well layer by successively and alternately forming a thin-film insulating layer having a thickness of 1˜10 nm and a thin-film semiconductor layer having a thickness of 1˜10 nm on a p-type or n-type silicon substrate for as many as several˜several tens of cycles; forming an emitter layer on the quantum well layer by using silicon having a silicon type different from that of the substrate; forming a metallic finger electrode on the emitter layer; forming a SiNx layer as an anti-reflection layer on an entire surface of the metallic finger electrode; and forming a passivation layer on a bottom surface of the substrate. |
地址 |
Cheongju-si, Chungcheongbuk-do KR |