发明名称 |
LAYER-LAYER ETCH OF NON VOLATILE MATERIALS |
摘要 |
A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch chamber. |
申请公布号 |
SG10201608573X(A) |
申请公布日期 |
2016.12.29 |
申请号 |
SGX10201608573 |
申请日期 |
2013.04.02 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
GUHA, JOYDEEP;MARKS, JEFFREY;JINNAI, BUTSURIN |
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