| 摘要 |
<p>A light emitting device which has a light emitting element having a light emitting layer comprising two layers of III Group nitride type compound semiconductor, wherein the layers have different AlGaInN compositions from each other, and emitting a light having a peak wave length in the ultraviolet region and another light having a peak wave length in the visible region, and a phosphor which is excited by the ultraviolet light emitted by the above element.</p> |
