摘要 |
<p>In the testing of one or more die (50) as part of a semiconductor wafer (46), electrical testing of an unstressed die (50) of a wafer (46) is undertaken. The die (50) of the wafer (46) is then physically stressed to a first stressed state, and electrical testing is undertaken thereon. The die (50) of the wafer (46) is then physically stressed to a second stressed state, and electrical testing is again undertaken on the die (50) as it is in its second stressed state. The results of the tests are compared and extrapolated to indicate electrical performance of the die (50) in other physically stressed states. A relatively simple tool (30) is provided for use in performing this method in an effective and rapid manner.</p> |