| 摘要 |
<p>A nitride semiconductor light emitting element comprising a work substrate (101a) formed on one principal plane of a nitride semiconductor substrate and having grooves and hills, a nitride semiconductor substrate layer (102) for covering the grooves and hills of the work substrate, and a light emitting element structure including a light emitting layer (106) containing a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer and formed between an n-type layer (103-105) and a p-type layer (107-110) on this nitride semiconductor substrate layer, a multi-layer-light-emitting-structure current constricting unit being formed above a region at least 1 νm away from the center in a width direction of a groove and at least 1 νm away from the center in a width direction of a hill.</p> |
