发明名称 SIDEWALLS AS SEMICONDUCTOR ETCH STOP AND DIFFUSION BARRIER
摘要 <p>Methods and apparatus of forming a semiconductor device using pedestals and sidewalls. The pedestals and sidewalls may provide an etch stop and/or a diffusion barrier during manufacture of a semiconductor device. Processes of forming diode connected vertical cylindrical field effect devices are disclosed to exemplify the use of the pedestals and/or sidewalls. A system for forming the pedestals and sidewalls is described.</p>
申请公布号 WO2002056358(P1) 申请公布日期 2002.07.18
申请号 US2001048401 申请日期 2001.11.02
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