| 摘要 |
PURPOSE: An optical sensing device and a driving method thereof are provided to improve the operation reliability of the optical sensing device by simply preventing a shift phenomenon of a threshold voltage generated in an oxide semiconductor transistor. CONSTITUTION: A switch transistor(130) and an optical sensor transistor(140) are formed on a substrate(101). The switch transistor and the optical sensor transistor have one common source and drain electrode(109). A first gate electrode(102) and a second gate electrode(103) are partially formed on the substrate. A gate insulation layer(104) is formed on the substrate, the first gate electrode, and the second gate electrode. A first source and drain electrode(108) and a second source and drain electrode(109) are formed on both sides of a first channel layer(106) and a second channel layer(107).
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